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| PJC945 NPN Epitaxial Silicon Transistor AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OS C. * * Complement to PJA733 Excellent DC Current Gain Linearly 0.1mA to 50mA Low Output Capacitance Cob=2.5PF(Typ.) @VCB =6V,f=1MHz Low Noise Figure NF=2.5dB(TYP.) IC =0.1mA,VCE = 6V Rg= 2K,f=1KHz DC Current Gain Selection Available TO-92 SOT-23 * * * ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO Ic PD PD Tj Tstg Rating 60 50 5 120 450 1.2 150 -55 ~150 Unit V V V mA mW W C C P in : 1. Emitter 2. Colletor 3. Base P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION Device PJC945CT PJC945CX Operating Temperature -20+85 Package TO-92 SOT-23 ELECTRICAL CHARACTERISTICS (Ta = 25C) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current-Gain-Bandwidth Product Output Capacitance Noise Figure h FE (2) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICEO hFE(1) hFE(2) VCE (SAT) VBE (SAT) VBE (on) fT C Ob NF Test Condition Ic = 10A, IE = 0 Ic =1.0mA, IB =0 IE = _10A, IC = 0 VCB= 45V,IE =0 VEB=3V,IC=0 VCE =40V,IB=0 VCE =6V,Ic =0.1 mA VCE =6V,Ic =1.0 mA IC=10mA,IB=1mA IC=10mA,IB=1mA IC=0.1mA,VCE =6V VCE =6V,IC=10mA VCB=6V,IE =0 f=1MHZ VCE =6V,IE = _0.5mA f=1KHZ ,Rs=2K Min 80 50 5 Typ Max 0.1 0.1 1 50 70 0.09 0.81 0.6 250 2.5 2.5 70 0.3 1 0.65 450 5 15 Unit V V V A A A 0.55 150 V V V MHz pF dB CLASSIFICATION R 70-140 P 120-240 Q 200-400 K 350-700 Classification hFE(2) 1-2 2002/01.rev.A PJC945 NPN Epitaxial Silicon Transistor 2-2 2002/01.rev.A |
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